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Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

机译：栅漏间距对原位SiN钝化InAlGaN / GaN MIS-HEMT的低频噪声性能的影响

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Rzin, Mehdi; Routoure, Jean-Marc; Guillet, Bruno; Méchin, Laurence; Morales, Magali; Lacam, Cédric; Gamarra, Piero; Ruterana, Pierre; Medjdoub, Farid;
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1. Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure [J] . M. Fátima Romero, Alberto Boscá, Jorge Pedrós, IEEE Electron Device Letters . 2017,第10期

机译：雾暴露下二维石墨烯对SiN钝化AlGaN / GaN MIS-HEMT的影响
2. Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs [J] . Yamashita Y.Watanabe I.Endoh A.Hirose N.Mimura T.Matsui T. Electronics Letters . 2011,第3期

机译：源极-漏极间距对45 nm栅AlGaN / GaN MIS-HEMT的DC和RF特性的影响
3. Compatibility of AlN/SiN_x Passivation With LPCVD-SiN_x Gate Dielectric in GaN-Based MIS-HEMT [J] . Mengyuan Hua, Yunyou Lu, Shenghou Liu, IEEE Electron Device Letters . 2016,第3期

机译：GaN基MIS-HEMT中AlN / SiN _{x 钝化与LPCVD-SiN _{x 栅介质的相容性}}
4. High Performance Self-aligned AlN/GaN MISHEMT with In-situ SiN_x Gate Dielectric and Regrown Source/Drain [C] . Xing Lu, Jun Ma, Peiqiang Xu, International Conference on Compound Semiconductor Manufacturing Technology . 2014

机译：高性能自对齐ALN / GaN Mishemt与原位SIN_X栅极电介质和再生源/排水管
5. Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect. [D] . Moradi, Maziar. 2010

机译：结合虚拟栅极和转移电子效应的影响，对AlGaN / GaN HFET的漏极电流特性进行分析建模。
6. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate [O] . Hyun-Seop Kim, Myoung-Jin Kang, Jeong Jin Kim, 2020

机译：凹入式栅极结构对具有薄AlOxNy MIS栅极的AlGaN / GaN-on-SiC MIS-HEMT的影响
7. Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs [O] . Rzin, Mehdi, Routoure, Jean-Marc, Guillet, Bruno, 2017

机译：栅漏间距对原位SiN钝化InAlGaN / GaN MIS-HEMT的低频噪声性能的影响

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

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